A developed Au-Si eutectic bonding method used for in situ SCS nano beam tensile chip

摘要

A novel bonding filming structure based on Au/Si eutectic bonding was developed for the fabrication of an in situ single crystal silicon (SCS) nano beam mechanical-electrical synchro-measuring system for TEM experiments. We used Poly-Si/Ti/Au/Au as bonding interface and successfully integrated the electrical measuring circuit,which was placed on bonding surface and insulated from the substrates on both sides of the eutectic interface, into the original SCS micro-tensile chip developed by our group in the early research. The high-quality bonding created under the pressure of 0.25mPa, temperature of 400℃, reached a shear strength of up to 80N for a 5mm*5mm cell. The measuring system based on Poly-Si/Ti/Au/Au bonding could also be applied to nano-feature studies of various MEMS/NEMS materials.