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Dielectric Properties of Pb(Zr,Ti)O_3 Heterolayered Thick Films Fabricated by Screen-Printing Method

机译:丝网印刷法制备Pb(Zr,Ti)O_3异质厚膜的介电性能

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Ferroelectric PZT heterolayered thick films were fabricated by the alkoxide-based sol-gel method. PZT(20/80) and PZT(80/20) paste were made and alternately screen-printed on the alumina substrates. The coating and drying procedure was repeated 4 times to form the heterolayered thick films. The thickness of the PZT heterolayered thick films was approximately 60 μm. All PZT thick films showed the typical XRD patterns of a perovskite polycrystalline structure. The relative dielectric constant and the dielectric loss of the PZT thick films sintered at 1050℃ were 283 and 1.90%, respectively.
机译:通过醇盐基溶胶-凝胶法制备了铁电PZT异质厚膜。制成PZT(20/80)和PZT(80/20)浆料,并交替丝网印刷在氧化铝基材上。重复涂布和干燥步骤4次以形成异层厚膜。 PZT异质层厚膜的厚度为约60μm。所有PZT厚膜均显示钙钛矿多晶结构的典型XRD图案。 1050℃烧结的PZT厚膜的相对介电常数和介电损耗分别为283和1.90%。

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