LARS: Logically adaptable retention time STT-RAM cache for embedded systems

摘要

STT-RAMs have been studied as a promising alternative to SRAMs in embedded systems' caches and main memories. STT-RAMs are attractive due to their low leakage power and high density; STT-RAMs, however, also have drawbacks of long write latency and high dynamic write energy. A popular solution to this drawback relaxes the retention time to lower both write latency and energy, and uses a dynamic refresh scheme that refreshes data blocks to prevent them from prematurely expiring. However, the refreshes can incur overheads, thus limiting optimization potential. In addition, this solution only provides a single retention time, and cannot adapt to applications' variable retention time requirements. In this paper, we propose LARS (Logically Adaptable Retention Time STT-RAM) cache as a viable alternative for reducing the write energy and latency. LARS cache comprises of multiple STT-RAM units with different retention times, with only one unit on at a given time. LARS dynamically determines which STT-RAM unit to power on during runtime, based on executing applications' needs. Our experiments show that LARS cache is low-overhead, and can reduce the average energy and latency by 35.8% and 13.2%, respectively, as compared to the dynamic refresh scheme.