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Preparation of high-purity Indium by Vacuum Instillation

机译:真空滴注制备高纯铟

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摘要

In this paper, a theoretical analysis was applied to analyze the possibility of preparation of high-purity indium by vacuum instillation. The relationship of distillation temperature, distillation time, metal evaporation rate and elimination the mixed effect have been discussed. The best conditions of Vacuum distillation purifying indium were as follows: vacuum for 10 ~ 20Pa, distillation temperature for 950 ℃, distillation time for 120min. At this time volatile of indium was only 36.6 percent rate and the rate of removal of thallium was more than 99%.
机译:本文通过理论分析,分析了通过真空滴注制备高纯铟的可能性。讨论了蒸馏温度,蒸馏时间,金属蒸发速率和消除混合效应的关系。真空蒸馏提纯铟的最佳条件为:真空度为10〜20Pa,蒸馏温度为950℃,蒸馏时间为120min。此时,铟的挥发率仅为36.6%,removal的去除率超过99%。

著录项

  • 来源
    《》|2009年|384-389|共6页
  • 会议地点 Shenyang(CN)
  • 作者

  • 作者单位

    The national engineering laboratory of the vacuum metallurgy of Kunming university of science and technology, Kunming 650093, china;

    The national engineering laboratory of the vacuum metallurgy of Kunming university of science and technology, Kunming 650093, china;

    Yunnan Province Key Laboratory of Non-ferrous Vacuum Metallurgy, Kunming 650093, china;

    Mamu NiCo Management(MCC) Limited, 100013, china;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    indium; purity indium; high-purity; indium vacuum instillation;

    机译:铟;铟高纯度;铟真空滴注;

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