Nonlinear table-based static HBT model including thermal effects

摘要

A nonlinear table-based thermal model of the static HBT behavior is presented for the first time and validated under DC operation. The generated model uses table-based nonlinear functions I_c and V _be in the output and input ports, respectively, and both are defined vs. I_b and V_ce by using a non-uniform bias grid. Thermal modeling (self-biasing and environment temperature dependence) is done by means of two analytical functions (one for each device port) involving table-based nonlinear coefficients. Five tables are the minimum required to accurately predict the device dc behavior vs. temperature. Model extraction is direct and does not require optimization. Excellent results have been obtained for different InGaAs/GaAs HBTs in the range 10 to 100 degC