Characterization of a metastable defect introduced in epitaxially grown boron-doped Si by 5.4 MeV #alpha#-particles

摘要

Deep level transient spectroscopy (DLTS) was used to examine the metastability of a defect configuration in epitaxially grown boron-doped p-type Si. We report the detection of a new metastable defect H#alpha#2 in p-Si following room temperature alpha particle irradiation. DLTS measurements coupled with bias-on/bias-off cooling cycles were used to study the annealing and introduction kinetics of this metastable defect. After removing H#alpha#2 by zero-bias annealing at room temperature, it was re-introduced by reverse bias annealing in the 240-265 K temperature range under predominantly first order kinetics. The energy level and apparent capture cross-section, as determined by DLTS, wer E_v+0.43 eV and 1.4x10~(-15) cm~2, respectively.