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Monolithic phased arrays: an overview

机译:单片相控阵:概述

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Summary form only given. The assembly of arrays including microwave or millimeter-wave monolithic integrated circuit technology has resulted in viable, but not monolithic, solutions. Among the first attempts were several very high risk subarray developments at 20 and 44 GHz that placed microstrip elements, phase shifters, and amplifiers in complete subarrays on GaAs substrates. This multilayer fabrication, 'tile' construction, has the primary advantage of being very thin. Of the several subarrays designed and built in this manner, the first ones suffered yield problems, and were not fully successful. A second construction approach that has found favor if the array can be made somewhat thicker is called 'brick' construction. In this architecture, the array is fabricated on multilayer circuit boards that are mounted perpendicular to the aperture. With either architecture, the array design is dominated by thermal constraints, and so device efficiency and noise figure have become the primary design tradeoffs. This resulted in the development of subarrays and circuits with pseudomorphic HEMT (high electron mobility transistor) and indium phosphide substrates.
机译:仅给出摘要表格。包括微波或毫米波整体集成电路技术的阵列组装导致可行但不是单片的解决方案。在第一次尝试中,在20和44GHz的几个非常高的风险子阵列开发,其将微带元件,移相器和放大器放置在GaAs基板上的完整子阵列中。这种多层制造,'瓷砖的结构,具有非常薄的主要优点。在这种方式设计和建造的几个子阵列中,第一个遭受了产量问题,并且没有完全成功。如果阵列可以在某种程度上更厚的是称为“砖”建筑的第二种施工方法,则发现了最有利的方法。在这种架构中,阵列在多层电路板上制造,该电路板垂直于孔。通过架构,阵列设计由热约束主导,因此设备效率和噪声系数已成为主要的设计权衡。这导致与假形旋转(高电子迁移率晶体管)和磷化铟基底的子阵列和电路的开发。

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