Beam tuning parameter optimization by Neural Network on the NISSIN BeyEX medium current ion implanter

摘要

In the ion implantation process on mass production of semiconductor devices, beam tuning parameters are important settings that directly affect the productivity. However, since the parameters are verified by physically complex interactions such as ion source conditions, installation accuracy, and beamline contamination, the parameters gradually mismatch against the optimized process, resulting in the need for periodic manual beam setup interventions to acquire adequate parameters.