Electrical Characteristics and Microstructures of Bi_(2.9)Pr_(0.9)Ti_3O_(12) and Bi_(2.9)Pr_(0.92)Ti_(2.97)V_(0.03)O_(12) Thin Films

摘要

Bi_(2.9)Pr_(0.9)Ti_3O_(12)(BPT) and Bi_(2.9)Pr(0.9)Ti_(2.97)V(0.03)O_(12)(BPTV) thin films with random orientation were fabricated on Pt/Ti/SiO_2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. The experimental results indicated that Pr doping into Bi_4Ti_3O_(12) (BIT) result in a remarkable improvement in ferroelectric property. The remanent polarization (P_r) and coercive field (E_c) of the BPT film were 28 μC/cm~2 and 80 kV/cm, respectively. Furthermore, V substitution improves the P_r value of the BTVT film up to 43 μC/cm~2, which is much larger than that of the BPT film.