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Bruno mechanism on voltage-controlled magnetic anisotropy in ultrathin cobalt films

机译:超薄钴薄膜电压控制磁各向异性的Bruno机制

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Voltage-controlled magnetic anisotropy (VCMA) in 3J-transition metals such as Fe and Co has been intensively studied [1]. While one mechanism to explain the VCMA is Bruno mechanism [2], that is, voltage-induced change in orbital magnetic moment in ferromagnetic metals, it has recently been pointed out the significance of the electric quadrupole mechanism to the VCMA in case Pt/MgO interface is employed [3]. However, there has been no report experimentally demonstrating the relative significance between the Bruno and the electric quadrupole mechanisms in 3 J-ferromagnetic metals because of alack of direct observation of the voltage -induced change of orbital magnetic moment in ferromagnetic metals.
机译:3J-过渡金属中的电压控制的磁各向异性(VCMA)被密集地研究了[1]。虽然解释VCMA的一种机制是Bruno机制[2],即铁磁金属中的轨道磁矩的电压诱导的变化,最近指出了在Pt / MgO的情况下对Vcma的电动四极机制的意义接口是使用[3]。然而,由于直接观察铁磁性金属中的轨道磁矩的电压诱导变化的直接观察,因此没有报告在3 J-铁磁金属中进行实验证明Bruno和电动四极机构之间的相对重要性。

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