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Correlations between green luminescence efficiency, intrinsic defects and co-doping Cl and S in ZnO phosphors

机译:绿发光效率,内在缺陷和共掺杂Cl和S在ZnO磷光体之间的相关性

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First-principles pseudo-potential approach on complete zinc oxide (ZnO), vacant O (ZnO∶Vo), vacant Zn (ZnO∶VZn), interstitial Zn (ZnO∶Zni), chloride (Cl) and sulfur (S) co-doped defective ZnO (ZnO∶ClSVZn, ZnO∶ClSZni) reveal that Vo is a shallow donor dopant which has nothing to do with green emission. VZn and Zni both induce green emission recombination levels in the gap. When Cl and S co-dope in defective ZnO, they will enhance the green emission luminescence intensity, because they can promote the formations of VZn and Zni defects.
机译:第一原理在完全氧化锌(ZnO)上的伪电位方法,空气o(ZnO:v O ),空缺Zn(ZnO:v Zn ),Intrestial Zn( ZnO:zN I ),氯化物(CL)和硫(S)共掺杂有缺陷ZnO(ZnO:ClSV Zn ,ZnO:Clszn I )揭示V O 是一种浅捐助掺杂剂,与绿色发射无关。 V ZN 和Zn I 两者均在间隙中诱导绿色发射重组水平。当Cl和S共料有缺陷的ZnO时,它们将增强绿色发射发光强度,因为它们可以促进V Zn 和Zn I 缺陷的形成。

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