CNFET Based Voltage Differencing Transconductance Amplifier

摘要

In CMOS Technology basic Problem mainly includes dopant fluctuation, tunnelling effect and line edge roughness below 45nm technology. Carbon Nanotube based structures is better option for widen the Moore's law due to its scalability channel electrostatics and higher mobility. In this manuscript we demonstrate an optimum design for linear property of CNTFET based VDTA at 32nm technology node. The proposed circuit consist of VDTA with CNTFET having two voltage input and two current outputs so that it works as voltage and transconductance operation to obtain the high performance. The minimum supply voltages of ±0.9V with 32nm technology mode are used. The CNTFET-VDTA performance is simulated on HSPICE. In this paper CNFET-based VDTA provides better results of DC transfer characteristics as compared with CMOS. All the simulation results are performed on HSPICE.