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LGSD/NGSD: High Speed Optical CMOS Imagers for E-ELT Adaptive Optics

机译:LGSD / NGSD:用于E-ELT自适应光学的高速光学CMOS成像仪

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The success of the next generation of instruments for ELT class telescopes will depend upon improving the image quality by exploiting sophisticated Adaptive Optics (AO) systems. One of the critical components of the AO systems for the E-ELT has been identified as the optical Laser/Natural Guide Star WFS detector. The combination of large format, 1760×1680 pixels to finely sample the wavefront and the spot elongation of laser guide stars, fast frame rate of 700 frames per second (fps), low read noise (< 3e-), and high QE (> 90%) makes the development of this device extremely challenging. Design studies concluded that a highly integrated Backside Illuminated CMOS Imager built on High Resistivity silicon as the most likely technology to succeed. Two generations of the CMOS Imager are being developed: a) the already designed and manufactured NGSD (Natural Guide Star Detector), a quarter-sized pioneering device of 880×840 pixels capable of meeting first light needs of the E-ELT; b) the LGSD (Laser Guide Star Detector), the larger full size device. The detailed design is presented including the approach of using massive parallelism (70,400 ADCs) to achieve the low read noise at high pixel rates of approx3 Gpixel/s and the 88 channel LVDS 220Mbps serial interface to get the data off-chip. To enable read noise closer to the goal of le- to be achieved, a split wafer run has allowed the NGSD to be manufactured in the more speculative, but much lower read noise, Ultra Low Threshold Transistors in the unit cell. The NGSD has come out of production, it has been thinned to 12 μm, backside processed and packaged in a custom 370pin Ceramic PGA (Pin Grid Array). First results of tests performed both at e2v and ESO are presented.
机译:Elt类望远镜的下一代仪器的成功将取决于通过利用复杂的自适应光学(AO)系统来提高图像质量。 E-ELT的AO系统的一个关键部件已被识别为光学激光/天然导杆WFS检测器。大幅面的组合,1760×1680像素,以精细采样波前和激光导向恒星的点伸长,快速帧速率为700帧(FPS),低读取噪声(<3E-)和高QE(> 90%)使这个设备的发展非常具有挑战性。设计研究得出结论,高度集成的背面照明CMOS成像器,基于高电阻率硅,作为最可能的技术。正在开发两代CMOS成像器:a)已经设计和制造的NGSD(天然导灯探测器),四分之一尺寸的先锋装置,880×840像素能够满足E-ELT的首先需要; b)LGSD(激光导向星检测器),较大的全尺寸装置。提出了详细的设计,包括使用大规模并行(70,400 ADC)来实现大约3 Gpixel / s的高像素速率的低读取噪声,以及88通道LVDS 220Mbps串行接口以获得数据的低读取噪声。为了使读取噪声更靠近LE-待实现的目标,允许在单元电池中更令人投机,但更低的读取噪声,超低阈值晶体管中允许制造NGSD。 NGSD已经过于生产,它已经薄为12μm,背面处理和包装在自定义370林陶瓷PGA(PIN网格阵列)中。提出了在E2V和ESO时进行的第一个测试结果。

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