A novel design technique for effective SCE control in nano-scaled devices using a buried metal

摘要

This paper presents a novel design scheme to reduce the short channel effects effectively in deep sub-micron MOSFET design. This scheme shows excellent improvement in the off-state current and proves to be very effective in controlling channel length modulation in nano-scale device design. This paper also proposes a subsequent theory to explain the effect of the design scheme on device characteristics supported by a through simulation study.