1207cm~(-1) infrared absorption band in carbon-rich silicon crystal

摘要

Silicon wafers with different carbon contents have been characterized by Fourier transform infrared spectroscopy technique. An infrared absorption band at 1207 cm~(-1) can be newly observed in the case of carbon content being above 1.7×10~(17)/cm~(-1), whose intensity increases with an increase of carbon concentration in silicon crystal. More interestingly, the 1207 cm~(-1) band cannot be influenced by the long-time annealing in the temperature range of 450-1250°C, suggesting the high thermal stability of this carbonrelated defect, which might be related to the presence of silicon carbide in silicon crystals.