novel active gate, drive method for high power IGBTs is proposed in this paper. It makes use of 2 simple c a p a c i t o r s and s e v e r a l T r a n s i e n t Voltage Suppressors (TVS) to gain different feedback gains in different turn-off transient period, in order to suppress the turn-off over voltage and control turn-off voltage rise slope. Comprehensive study among several application oriented methods is carried out to show its advantages by Saber simulator. With consideration of device safety, an evaluation criterion for active gate drive circuit is proposed.
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机译：本文提出了新型主动闸，提出了高功率IGBT的驱动方法。它利用2简单的C a P a c i t r r和s e v e r a l t r a n s i n t抑制器（tvs），以在不同的关断瞬态时段中获得不同的反馈增益，以抑制过电压和控制关闭电压上升斜率的关断。进行了几种面向应用方法的综合研究，以表明Saber模拟器的优势。考虑到设备安全性，提出了用于有源栅极驱动电路的评估标准。
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