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Understanding microstructural effects on long term electrical fatigue in multilayer PZT actuators

机译:了解多层PZT执行器长期电疲劳的微观结构效应

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In this study, multilayered PbZrxTi1-xO3 (PZT) samples were produced by tape-casting and subsequent sintering at temperatures in the range of 1175 to 1325. Sintering times were 6 minutes and 24 minutes. Samples were poled and also electrically fatigued by long-term exposure (≈106 cycles) to cyclic electric fields. The parameters of initial and remnant polarization were estimated from hysteresis loops. Changes in the crystallographic microstructure as a function of sintering temperature TS and sintering time were examined by scanning electron microscopy (SEM) and X-ray diffraction (XRD) to gain insight on fatigue mechanisms and their prevention. The microstructural results, such as domain reorientation and amount of secondary phases, explained the results of electrical observations. We found that grain sizes and internal strains were major influence factors on device performance. Domain sizes were about two orders of magnitude smaller than grain sizes. Therefore, domain-grain wall interaction did not influence domain switching. Domain wall movement was facilitated in samples processed at TS less than 1250, and such samples were more resistant to electrical fatigue. Samples degraded faster at TS above 1250, but here a higher device performance power was found due to an increased unit cell tetragonality that yielded higher polarization values.
机译:在该研究中,通过胶束浇铸和随后在1175至1325的温度下烧结产生多层PBZrxTi1-XO3(PZT)样品。烧结时间为6分钟和24分钟。抛光样品并通过长期暴露(≈106循环)电致电疲劳到循环电场。滞后环估计初始和残余极化的参数。通过扫描电子显微镜(SEM)和X射线衍射(XRD)来检查作为烧结温度Ts和烧结时间的函数的晶体显微结构的变化,以获得疲劳机制及其预防的识别。诸如域重构和二次相的量的微观结构结果解释了电视程的结果。我们发现谷物尺寸和内部菌株是设备性能的主要影响因素。域尺寸大约比晶粒尺寸小的两个数量级。因此,结构域壁相互作用不会影响域切换。在在TS小于1250的样品中促进了畴壁运动,并且这种样品更耐电疲劳。样品在1250上方的TS下更快地降低,但是由于单位细胞四聚变增加,发现了更高的装置性能功率,其产生较高的偏振值。

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