In this work we present a study on the Super Luminescent Light Emitting Diodes (SLEDs) performance under high doses of gamma radiation. We investigate GaAs SLEDs with emission wavelengths around 830 nm. The devices were exposed to ionising radiation at a dose rate of about 4.7 Gy/s, up o a cumulated dose of 10.1 MGy n the CMF facility of the Belgian nuclear research centre SCK·CEN. We measured he device characteristcs before and after irradiation. We show hat the SLED performance is only marginally affected.
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