Research on LT GaSb Buffer Layerduring GaSb Growth on GaAs Sustrate by MBE

摘要

Epitaxial GaSb thin films were grown without low temperature (LT) GaSb buffer layer and with LT GaSb buffer layer with different thickness and different growth rate. The properties of the GaSb thin films were studied by employing X-ray diffraction (XRD), and photoluminescence (PL) spectra. The LT GaSb buffer layer is important to improve the quality of the GaSb epitaxial film which can reduce the threading dislocation density. The optimized thickness of LT GaSb buffer is 20nm. The optimized growth rate of LT GaSb buffer is 1.43 μm/h.