FORMATION OF ELECTRICALLY CONDUCTING MESOSCALE WIRES THROUGH SELF-ASSEMBLY OF ATOMIC CLUSTERS

摘要

Atomic clusters can be produced in a size range (100nm to 0.5nm) that bridges the gap between the limits of current lithographic fabrication technologies for integrated circuits and the atomic/molecular regime. The work presented here aims to combine established 'top-down' device processing with 'bottom-up' engineered cluster assembly. Conducting cluster deposition and standard optical fabrication techniques have been used to produce wires on a textured (V-grooved) substrate. The lengths of the wires (ranging from 2μm to 1mm) are defined simply by the separation of NiCr/Au contacts. The deposited nanoparticles range in size from 20-100nm and in principle define the width of the nanowire. In-situ conductance measurement allows precise control of the deposition process and the onset of conduction in the wire is readily monitored as a function of deposition time. The effectiveness of the surface templating technique is demonstrated by SEM and AFM imaging carried out after deposition. The surface coverage is seen to vary from <20% on the unpatterned (normal-to-beam) surface (which is required to be non-conducting) to >100% at the apexes of the V-grooves used to promote growth of the wire. Self assembly of the nanoparticles leads to completion of a wire between the pre-formed contacts with no possibility of a parasitic conduction path. Wires formed through this technique currently have minimum widths of ～1μm but straightforward extensions of the technique should soon allow nanowire formation.