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Electronic properties of Indenothiophene-embedded Homologues

机译:ineNothiophene嵌入同源物的电子性质

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TOF measurements of non-dispersive hole mobilities of a homologue series of amorphous indenothiophene-based -conjugated materials have been achieved. The obtained results indicate that the hole mobilities are strongly influenced by the length and rigidity of the -conjugated backbone and the structures of peripheral substitutions. A hole mobility up to 10~(-3) cm~2 V~(-1)s~(-1) was observed for a rigid and coplanar indenothiophene-based derivative (4PP).
机译:已经达到了无定形的无定形茚食素基 - 缀合材料的同源系列的非分散孔迁移率的TOF测量。 所得结果表明,孔迁移率受到缀合的骨架的长度和刚性的强烈影响,以及外周取代的结构。 对于刚性和共面甲酚的衍生物(4PP),观察到高达10〜(-3)cm〜2V〜(-1)S〜(-1)的空穴迁移率。

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