Thermal Instability of a-Si:H TFT

摘要

Thermal instability of a-Si:H TFTs were studied by I-V measurement just after ITO high temperature anneal. The results show gradual Ion decreasing and Vth positive shifting after ITO anneal. After 4 hrs, they will get more stable. As a result, the time of TEG measurement after ITO anneal is very critical for Fab in-line monitor and model card generation.