Fabrication of CuInSe{sub}2 cells by the evaporation of binary selenide compounds

摘要

CuInSe{sub}2 films were prepared by the three-stage process using the evaporation of In{sub}2Se{sub}3, Cu{sub}2Se and Se. In the third stage, the depth of Cu-poor surface region was precisely adjusted by the control of the evaporation rate of In{sub}2Se{sub}3 and Se. The interface between Cu-poor surface region and stoichiometric CuInSe{sub}2 film was characterized using AES, microEDAX, and RBS. The 9.59% efficiency was achieved in the 0.16 cm{sup}2 area cell. The efficiency is the same level of the CIS cell prepared using the element coevaporation, opening up the application of binary compounds for highly efficient Cu(In, Ga)Se{sub}2 cells.