Photoelectrochemical study of state of art copper indium gallium diselenide thin films

摘要

State of the art CIGS thin films have been studied by means of the semiconductor-electrolyte junction. They appear as chemically robust allowing to use aggressive electrolyte compositions as for instance more acidic pH, down to 0 in sulfuric acid environment. In these electrolytes, reliable capacitance and photo-current related characterization techniques have been used. It has been shown that a shown treatment in a gold (III) solution can facilitate the characterizations, and stabilize the surface composition. These results tend towards settling a standardized electrochemical testing procedure for CIGS layers.