首页> 外文会议>Meeting of the Electrochemical Society >Optical Constants Determination of Pseudomorphic Si_(1-x)Ge_x Layers on Si(001), with 0

【24h】

Optical Constants Determination of Pseudomorphic Si_(1-x)Ge_x Layers on Si(001), with 0 展开▼

机译：光学常数测定Si（001）上的假形晶体Si_（1-x）Ge_x层，0 展开▼

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

The optical constants of fully strained Si_(1-x)Ge_x layers (0

机译：通过可变角度在0.73至6.48eV光谱范围内测定通过减压化学气相沉积而生长的完全应变Si_（1-x）Ge_x层（0

著录项

来源
《Meeting of the Electrochemical Society》|2014年||共11页
会议地点
作者
E. Nolot; J. M. Hartmann; J. Hilfiker;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种
中图分类 TN304-53;
关键词

相似文献

外文文献
中文文献
专利

1. Analysis on 3C-SiC layer grown on pseudomorphic-Si/Si_(1-x)Ge_x/Si(001) heterostructures [J] . N. Piluso, M. Camarda, R. Anzalone, Materials science forum . 2015,第期

机译：在伪晶Si / Si_（1-x）Ge_x / Si（001）异质结构上生长的3C-SiC层的分析
2. Effects of stress on the dielectric function of strained pseudomorphic Si_(1-x)Ge_x alloys from 0 to 75% Ge grown on Si (001) [J] . Gangadhara Raja Muthinti, Manasa Medikonda, Thomas Adam, Journal of Applied Physics . 2012,第5期

机译：应力对在Si（001）上生长的0至75％Ge的应变伪晶Si_（1-x）Ge_x合金介电功能的影响
3. Determination of phonon deformation potentials and strain-shift coefficients in Ge-rich Si_(1-x)Ge_x using bulk Ge-rich Si_(1-x)Ge_x crystals and oil-immersion Raman spectroscopy [J] . Yokogawa Ryo, Takeuchi Kazuma, Murakami Tatsumi, Japanese journal of applied physics . 2018,第10期

机译：使用块状富Ge的Si_（1-x）Ge_x晶体和油浸拉曼光谱法测定富Ge的Si_（1-x）Ge_x中的声子形变势和应变位移系数
4. Optical Constants Determination of Pseudomorphic Si_(1-x)Ge_x Layers on Si(001), with 0＜x＜0.54 [C] . E. Nolot, J.M. Hartmann, J. Hilfiker SiGe, Ge, and related compounds: materials, processing, and devices symposium;Meeting of The Electrochemical Society . 2014

机译：0 ＜x ＜0.54的Si（001）上伪晶Si_（1-x）Ge_x层的光学常数测定
5. Ultra-high B doping during Si(1-x)Ge(x)(001) gas-source molecular-beam epitaxy: A mechanistic study of layer growth kinetics, dopant incorporation, electrical activation, and carrier transport. [D] . Glass, Glenn Aaron. 1999

机译：Si（1-x）Ge（x）（001）气源分子束外延期间的超高B掺杂：层生长动力学，掺杂剂掺入，电激活和载流子传输的机理研究。
6. Anisotropic Complex Refractive Indices of Atomically Thin Materials: Determination of the Optical Constants of Few-Layer Black Phosphorus [O] . Aaron M. Ross, Giuseppe M. Paternò, Stefano Dal Conte, 2020

机译：原子薄材料的各向异性复合折射率：几层黑色磷的光学常数的测定
7. Observation of a (2X8) surface reconstruction on Si_(1-x)Ge_x alloys grown on (100) Si by molecular beam epitaxy [O] . Croke E. T., Hauenstein R. J., Fu T. C., 1991

机译：通过分子束外延对在（100）Si上生长的Si_（1-x）Ge_x合金进行（2X8）表面重构的观察
8. Photoresponse Model for Si_(1-x)Ge_x/Si Heterojunction Internal Photoemission Infrared Detector [R] . Lin, T., Park, J. S., Gunapala, S. D., 1993

机译：si_（1-x）Ge_x / si异质结内部光电发射红外探测器的光响应模型

Optical Constants Determination of Pseudomorphic Si_(1-x)Ge_x Layers on Si(001), with 0 展开▼

摘要

著录项

相似文献

相关主题

期刊订阅