The anelastic relaxation process in crystalline solids is influenced by various mechanisms including a.o. diffusion of point defects, dislocation formation, movement and multiplication. To analyze the type and concentration of relaxing units participating in a particular thermally activated process, measuring the temperature dependent internal friction is a well-known approach. In the present study, the impulse excitation technique was used to analyze the internal friction in single crystal Ge in the <111>-, <110>- and <100>- directions between room and melting temperature. The internal friction spectra reveal up to three internal friction peaks. To interpret the observed internal friction peaks, various aspects of the peaks such as activation energy, position and relaxation time will be discussed.
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