Frequency response of time-varying photocapacitance of an InP:Fe MIS capacitor

摘要

In this paper the effect of intensity modulated illumination on the photocapacitance of an InP metal-insulator-semiconductor (MIS) structure has been reported. A theoretical model of the device has been developed and the results obtained on the basis of the model have been presented for determining the dependence of the time-varying photocapacitance of the device on the frequency of the signal modulating the intensity of incident illumination.