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GPU accelerated Monte-Carlo simulation of SEM images for metrology

机译:GPU加速Monte-Carlo Month Moverogy SEM图像模拟

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In this work we address the computation times of numerical studies in dimensional metrology. In particular, full Monte-Carlo simulation programs for scanning electron microscopy (SEM) image acquisition are known to be notoriously slow. Our quest in reducing the computation time of SEM image simulation has led us to investigate the use of graphics processing units (GPUs) for metrology. We have succeeded in creating a full Monte-Carlo simulation program for SEM images, which runs entirely on a GPU. The physical scattering models of this GPU simulator are identical to a previous CPU-based simulator, which includes the dielectric function model for inelastic scattering and also reffinements for low-voltage SEM applications. As a case study for the performance, we considered the simulated exposure of a complex feature: an isolated silicon line with rough sidewalls located on a at silicon substrate. The surface of the rough feature is decomposed into 408 012 triangles. We have used an exposure dose of 6 mC/cm2, which corresponds to 6 553 600 primary electrons on average (Poisson distributed) per image. We repeat the simulation for various primary electron energies, 300 eV, 500 eV, 800 eV, 1 keV, 3 keV and 5 keV. At first we run the simulation on a GeForce GTX480 from NVIDIA. The very same simulation is duplicated on our CPU-based program, for which we have used an Intel Xeon X5650. Apart from statistics in the simulation, no difference is found between the CPU and GPU simulated results. The GTX480 generates the images (depending on the primary electron energy) 387 to 894 times faster than a single threaded Intel X5650 CPU. Although this is a tremendous speedup, we actually have not reached the maximum throughput because of the limited amount of available memory on the GTX480. Nevertheless, the speedup enables the fast acquisition of simulated SEM images for metrology. We now have the potential to investigate case studies in CD-SEM metrology, which otherwise would take unreasonable amounts of computation time.
机译:在这项工作中,我们解决了维度计量中数值研究的计算时间。特别地,已知用于扫描电子显微镜(SEM)图像采集的全部Monte-Carlo仿真程序是臭名昭着的。我们在减少SEM图像仿真的计算时间方面的追求使我们研究了图形处理单元(GPU)进行计量。我们成功地为SEM图像创建了完整的Monte-Carlo仿真程序,它完全在GPU上运行。该GPU模拟器的物理散射模型与先前的基于CPU的模拟器相同,其包括用于无弹性散射的介质函数模型,以及低压SEM应用的再灰度。作为对性能的案例研究,我们考虑了复杂特征的模拟曝光:与位于硅衬底的粗侧壁上的隔离硅线。粗略特征的表面分解为408 012三角形。我们使用了6mc / cm2的曝光剂量,其平均值(泊松分布)对应于6 553 600个主要电子。我们重复各种初级电子能量的仿真,300eV,500eV,800eV,1 KeV,3 KeV和5 Kev。首先,我们在NVIDIA的GeForce GTX480上运行模拟。非常相同的模拟在基于CPU的程序上重复,我们使用了英特尔Xeon X5650。除了仿真中的统计数据外,CPU和GPU模拟结果没有区别。 GTX480比单螺纹英特尔X5650 CPU更快地生成图像(取决于主电子能源)387至894倍。虽然这是一个巨大的加速,但由于GTX480上的可用内存有限,我们实际上尚未达到最大吞吐量。尽管如此,加速使得能够快速获取模拟SEM图像进行计量。我们现在有可能调查CD-SEM Metrology的案例研究,否则将采取不合理的计算时间。

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