Investigation of SiOx layer annealing process using Monte Carlo simulation

摘要

Simulation of silicon nanocluster formation in SiOx and SiO2-SiO-SiO2 layers after high temperature annealing was carried out. Cluster size distribution depending on temperature and annealing time was obtained. The process of Si 3D island formation during silicon deposition on silicon dioxide substrate was examined. Simulation demonstrated the role of SiO molecule in Si-nc aggregation.