Copper Germanium alloys formation by low temperature atomic hydrogen treatment

摘要

The behavior of the two-layer thin-film Cu/Ge system deposited on i-GaAs substrate at treatment in atomic hydrogen was investigated. It was found that such processing in an atomic hydrogen flow with density 1015 at. cm2 s−1 at room temperature for 5 min leads to the solid state interdiffusion of Cu and Ge thin films and poly-crystalline CuGe alloy formation with the vertically oriented grains.