Use of self-aligned technology in GaAs scotty diode fabrication

摘要

The self-aligned technology of vertical diode fabrication is considered. The essential feature of the used technology is applying of the self-alignment principle in etching of base mesa and formation of ohmic contact. The experimental results show that the self-aligned technology allows to reduce series resistance and reverse leakage current and also to improve the ideality factor in comparison with similar diodes produced with use of standard technology.