Analysis of certain methods for determining contact resistivity

摘要

Different options for determining contact resistivity using TLM method are analyzed in the paper. The analysis is carried out on the example of two simplified test structures. The first structure corresponds to the case when the resistance of metal contact equals zero, and the sheet resistance of semiconductor under the contact depends on the technology of contact formation. Contacts with buffer layer of silicide located between metal and silicon substrate are analyzed on the example of the second structure.