ALD-SiO2 deposition and CD slimming techniques for double patterning and a heater-less batch tool

摘要

An atomic layer deposition (ALD)-SiO2 film for use as the spacer mask in self-aligned double patterning (DP) and a slimming process of critical dimension (CD) for the photoresist pattern are described. The ALD-SiO2 film deposition and the photoresist pattern slimming are processed with the vertical batch semiconductor production system for 300 mm wafers at room temperature. The room temperature process does not require a main heater and cooling water, and therefore greatly reduces CO2 emissions and impact on the environment.