This paper describes how memristors could be used as an analog memory and computing elements. The key idea is to apply comparison and programming phases cyclically so that the memristor can be programmed to a given conductance level at a fixed voltage. It is further described how the cyclical programming could be used in computing. A configuration needed to copy the sum of conductances of two memristors into a third one is described. It is further shown how the devices could be configured so that addition and subtraction of positive and negative analog conductances could be performed. The presented memory structure requires a memristor model with a nonlinear programming sensitivity (programming threshold) for proper programming selectivity. A model of such a memristor is shown and key simulations are presented.
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