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Impedance spectroscopy of organic hetero-layer OLEDs as a probe for charge carrier injection and device degradation

机译:有机杂层OLED的阻抗光谱作为电荷载体注入和器件降解的探针

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Impedance spectroscopy (IS) is a powerful method for characterizing the electrical properties of materials and their interfaces. In this study we use IS to investigate the charge carrier injection properties of different anodes and anode treatments in bottom-emitting organic light-emitting diodes (OLEDs). These are ITO-based (indium tin oxide) hetero-layer devices with TPD (N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4-diamine) as hole transporting layer (HTL) and Alq_3 (tris-(8-hydroxyquinoline) aluminum) as emission and electron transporting layer (EML and ETL, respectively). A detailed analysis of the capacitance as function of frequency and DC bias yields information about trapped and interfacial charges as well as the dynamics of injected charges. Furthermore, we use IS to study degradation processes in OLEDs.
机译:阻抗光谱(IS)是用于表征材料及其界面的电性能的强大方法。在该研究中,我们使用的是研究不同阳极和阳极处理中的底部发射有机发光二极管(OLED)的阳极处理的电荷载体注射特性。这些是基于ITO的(氧化铟锡)杂层器件,具有TPD(N,N'-二苯基-N,N'-BIS(3-甲基苯基)-1,1'-联苯-4,4-二胺)如空穴传输层(HTL)和Alq_3(三羟基喹啉)铝)作为发射和电子传输层(分别为EML和ETL)。作为频率和直流偏置的功能的电容的详细分析产生有关捕获和界面电荷的信息以及注入电荷的动态。此外,我们使用是研究OLED中的退化过程。

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