Schottky barriers; Schottky diodes; integrated circuit design; p-n junctions; power integrated circuits; Schottky metal contact; breakdown voltage; current surge conditions; forward current; forward mode; integrated high-voltage Schottky diode; leakage current; p-n-junctions; power management IC; silicon-based power management integrated circuits; temperature dependency; voltage -25 V; Anodes; Junctions; Leakage currents; Schottky diodes; Temperature dependence; Temperature measurement; Tin; High Voltage; PMIC; Power Management Integrated Circuit; QRR; Schottky Diode; Schottky barrier height SBH; Switching losses;
机译:高功函数,复合栅极金属工程技术,用于4H碳化硅中的低DIBL,高增益,高密度高级RF功率静电感应晶体管(SIT)和HV肖特基二极管
机译:质子辐射温度对高功率高压碳化硅肖特基二极管特性的影响
机译:具有集成三栅晶体管的高压低泄漏AlGaN / GaN三阳极肖特基二极管
机译:用于电源管理IC的集成高压(HV)肖特基二极管
机译:4H碳化硅中的单片集成功率JFET和结势垒肖特基二极管。
机译:用于射频功率检测和低功率接收应用的双功能片上AlGaAs / GaAs肖特基二极管
机译:具有集成三栅极晶体管的高压和低泄漏AlGaN / GaN三阳极肖特基二极管