Copper and Barrier CMP of Magnetic Random Access Memory (MRAM) Devices

摘要

Widespread use of wireless communication devices and other portable digital electronics have created an increasing demand for non-volatile random access memory such as MRAM that is both high density and high speed. The key attributes of MRAM (magnet oresistive random access memory) are non-volatility, high speed operation and unlimited read and write endurance. MRAM is based on the integration of magnetic tunnel junction material and complimentary metal oxide semiconductor (CMOS) circuits. This integration creates numerous challenges that are normally not seen in conventional CMOS device processing.