An improved noise modeling technique for microwave MESFETs / HEMTs versus temperature is presented. It is based on an artifical neural network (ANN) that produces nosie parameters as its outputs for device temperature, S parameters and frequency at its inputs. Once trained, the proposed model can be used for efficient prediction of transistor noise parameters over a wide temperature range. Since the model is based on ANN, all noise-generating mechanisms are included and therefore it is more accurate than empirical transistor models, as it is shown on a numerical example.
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