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Surface Wave Plasma Oxidation at Low Temperature for Gate Insulator of Poly-Si TFTs

机译：多Si TFT栅极绝缘子低温表面波等离子体氧化

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Surface wave plasma oxidation was investigated under Kr gas dilution for the formation of the gate insulator of Poly-Si TFTs. We clarified the relationship between the oxidation rate and the oxygen atom density in the plasma. The structure and interface properties of the plasma-oxide films at 300°C are very similar to those of the thermal-oxide.

机译：在KR气体稀释下研究了表面波等离子体氧化，以形成多SiTFT的栅极绝缘体。我们阐明了氧化率与血浆中氧原子密度之间的关系。在300℃下的血浆氧化膜的结构和界面性质与热氧化物的结构和界面性质非常相似。

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《International display workshops》|2002年||共4页
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M. Goto; K. Azuma; T. Okamoto; Y. Nakata;
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1. Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs [J] . J. W. Lim, S. J. Yun, Y. H. Kim Electrochemical and solid-state letters . 2004,第9期

机译：等离子体增强ALD用于超低温多晶硅TFT的两层栅极绝缘子的研究
2. Low-Temperature Gate Insulator for Poly-Si Thin Film Transistors by Combination of Photo-Oxidation and Plasma Enhanced Chemical Vapor Deposition Using Tetraethylorthosilicate and O_2 Gases [J] . Yukihiko NAKATA, Tetsuya OKAMOTO, Toshimasa HAMADA, IEICE Transactions on Electronics . 2002,第11期

机译：通过光氧化和原硅酸四乙酯和O_2气体的等离子体增强化学气相沉积相结合的多晶硅薄膜晶体管的低温栅极绝缘子
3. High quality SiO2 gate insulator suitable for poly-Si TFTs on plastic substrates employing inductively coupled plasma-chemical vapor deposition with N2O plasma treatment and excimer laser annealing [J] . Han SM, Shin MY, Park JH, Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites . 2006,第9a20期

机译：高质量SiO2栅极绝缘体，适用于塑料基板上的多晶硅TFT，采用N2O等离子体处理和准分子激光退火的电感耦合等离子体化学气相沉积
4. Surface Wave Plasma Oxidation at Low Temperature for Gate Insulator of Poly-Si TFTs [C] . M. Goto, K. Azuma, T. Okamoto, The Ninth International Display Workshops (IDW '02) Dec 4-6, 2002 Hiroshima, Japan . 2002

机译：多晶硅TFT栅极绝缘子的低温表面波等离子体氧化
5. Device quality low temperature gate oxide growth using electron cyclotron resonance plasma oxidation of silicon. [D] . Jaju, Vishwas. 2008

机译：利用电子回旋共振等离子体对硅进行氧化，可提高器件质量，使低温栅极氧化物生长。
6. Low-temperature poly-Si nanowire junctionless devices with gate-all-around TiN/Al2O3 stack structure using an implant-free technique [O] . Chun-Jung Su, Tzu-I Tsai, Horng-Chih Lin, 2012

机译：采用无注入技术的全栅TiN / Al2O3堆叠结构的低温多晶硅纳米线无结器件
7. Properties of Poly-Si TFT's using Oxide-Nitride-Oxide Films as Gate Insulators [O] . 2003

机译：使用氧化物氮化物氧化物膜作为栅极绝缘体的多Si TFT的性质

Surface Wave Plasma Oxidation at Low Temperature for Gate Insulator of Poly-Si TFTs

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