A novel temperature sensor, designed in a CMOS standard process (Alcatel Mietec 0.7 #mu#). which makes use of a temperautre sensitive Wheatstone bridge, is here presented. The bridge is fabricated using polysilicon resistors layers of positive (al = 620 ppm/deg C) and negative first order temperature coefficients (a2 = -2100ppm/deg C). The output voltage is independent on the values chosen for the resistances. The circuit has been powered at low voltage supply (1 V), so to be used also in portable applications. The output sensitivity is about 1.3 mV/deg C. The resolution is around 10~(-5) deg C/(Hz)~(1/2), considering a 10 K#OMEGA# resistance, at room temperature.
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