Characterization of Defects in Electron Irradiated 6H-SiC by Positron Lifetime and Electron Spin Resonance

摘要

Defects in 6H-SiC produced by 3 MeV electron irradiation were studied using positron lifetime and electron spin resonance (ESR) with annealing experiment. From the positron lifetime measurements, vacancy-type defects were found to be generated by irradiation. Three ESR signals were observed. Comparing with the positron lifetime data, the esr centers were related to vacancy defects. Structural models and annealing kinetics are discussed for defects produced by irradiation.