Er-doped Phosphate glass Films Deposited by RF-Sputter Processes for 1.54 μm Waveguide Amplifiers

摘要

Er-doped phosphate glasses have been prepared and optimized. In view of fabricating 1.54 μm planar waveguide amplifiers, RF-sputtering techniques were employed to produce Er-doped phosphate glass films on Si wafers. Film compositions were characterized by X-ray Photoelectron Spectroscopy. Significant loss of volatile elements in the films was observed due to preferential sputtering. Influence of sputtering process parameters on the film compositions was studied. Luminescence properties of Er-doped films were measured. By postannealing of deposited films in pure oxygen, Er luminescence lifetime of the 1.5 μm transition could be increased from 1-2ms to 10-11 ms.