Transient global modeling of oxygen and carbon segregations during the pulling process of Czochralski silicon crystal growth

摘要

Transient global modeling of the Czochralski silicon (CZ-Si) crystal growth process is essential for understanding the dynamic behaviors of the heat and mass transport in the crystallization set-up. Furthermore, segregation of impurities and dopants could also be predicted dynamically by the transient global simulation. Excessive oxygen (O) and carbon (C) can both degrade the crystal and wafer by forming the precipitates and micro-defects. Therefore, transport and segregation of O and C must be investigated for the pulling process.