Terahertz light amplification of stimulated emission of radiation in current-injection graphene channel transistor

摘要

Linear and gapless energy spectrum of graphene carriers enables population inversion under optical and electricalpumping. We first theoretically discovered this phenomenon and demonstrated experimental observation of single-modeTHz lasing with rather weak intensity at 100K in current-injection pumped graphene-channel field-effect transistors(GFETs). We introduce graphene surface plasmon polariton (SPP) instability to substantially boost the THz gain. Wedemonstrate our experimental observation of giant amplification of THz radiation at 300K stimulated by grapheneplasmon instabilities in asymmetric dual-grating gate (ADGG) GFETs. Integrating the graphene SPP amplifier into aGFET laser will be a promising solution towards room-temperature intense THz lasing.