Resistive Switching Memory Devices based on All-inorganic Perovskite CsPbBr_3 Quantum Dot

摘要

All-inorganic perovskite quantum dots (QDs) have widely used in a lot of micro-nano photoelectric devices. However,resistive random access memory (RRAM) devices based on All-inorganic perovskite QDs are relatively scarce. In thiswork, a RRAM, which exhibits the write-once-read-many-times (WORM) memory effect, based on CsPbBr_3 QDs wassuccessfully fabricated by solution processed method at room temperature. The CsPbBr_3 QDs based memory showsexcellent characteristics with great reproducibility, good data retention ability, irreversible electrical transition from thehigh resistance state (HRS) or OFF state to the low resistance state (LRS) or ON state and the resistance ratio (ON/OFF)can reach almost 107. To study the CsPbBr_3 QDs based WORM memory provides an opportunity to develop the nextgeneration high-performance and stable WORM devices.