Determination a semiconductors parameters of single-phase controlled compensation device

摘要

The processes of formation and distribution of currents and voltages in circuits of a single-phase controlled compensation device are considered. In the case under consideration, the formation of the reference current of the device is provide by the impulse control circuit. Using the methods of electrical engineering theory and convertor technology, an analysis of electrical processes in the circuit, including modulation of current and voltage on the network side of the device and the storage capacitor side. It is note that, despite the significant pulsating of storage capacitor voltage, the current in the circuit is variable with complex nature due to the processes of energy transfer through the network frequency and modulation frequency. Integral expressions for determining currents and voltages in the circuit elements of a single-phase controlled compensation device are analytically substantiate. These expressions can be used to calculate the electrical parameters by which the elements of the controlled compensator are selected.