首页> 外文会议>IEEE International Solid- State Circuits Conference >24.1 A 24-to-30GHz Watt-Level Broadband Linear Doherty Power Amplifier with Multi-Primary Distributed-Active-Transformer Power-Combining Supporting 5G NR FR2 64-QAM with >19dBm Average Pout and >19 Average PAE
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24.1 A 24-to-30GHz Watt-Level Broadband Linear Doherty Power Amplifier with Multi-Primary Distributed-Active-Transformer Power-Combining Supporting 5G NR FR2 64-QAM with >19dBm Average Pout and >19 Average PAE

机译:24.1具有多主分布式有源变压器功率组合的24至30GHz瓦特级宽带线性Doherty功率放大器,支持5G NR FR2 64-QAM,平均P out 和> 19dBm平均PAE百分比

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The continuous worldwide demand for multi-Gb/s data-rate has driven the rapid development and standardization of 5G New Radio (NR) specifications in the mmwave bands [1]–[3]. As a result, there is a surge of interest in high-performance yet compact mm-wave 5G front-end chipsets to enable large-aperture phased arrays. In User Equipment (UE) devices, the limited form factor restricts the number of antenna array elements, e.g., 2×2, which dramatically increases the output power $(mathrm{P}_{mathrm{out}})$ requirement per element [1], [4]. For base stations, although some applications require only moderate element $mathrm{P}_{mathrm{out}}$ and high antenna gain, high $mathrm{P}_{mathrm{out}}$ capabilities allow array-divisions/sub-arrays for concurrent multi-stream mmwave links.
机译:在MMWAVE频段[1] - [3]中,对多GB / S数据速率的持续持续的全球需求推动了5G新型无线电(NR)规格的快速开发和标准化。结果,在高性能且紧凑的MM波前端芯片组中存在感兴趣的兴趣,以实现大孔径相控阵。在用户设备(UE)设备中,有限形状因子限制了天线阵列元件的数量,例如,2×2,其显着增加输出功率 $(\ mathrm {p} _ {\ mathrm {out}})$ 每个元素的要求[1],[4]。对于基站,虽然某些应用只需要中等元素 $ \ mathrm {p} _ {\ mathrm {out}} $ 和高天线增益,高 $ \ mathrm {p} _ {\ mathrm {out}} $ 功能允许阵列 - 分区/子阵列用于并发多流MMWAVE链接。

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