Performance Analysis of Enhancement Mode Composite Channel MOSHEMT Device for Low Power Applications

摘要

High Electron Mobility Transistor (HEMT) is currently playing a major role in electronics industries for low and high-power applications along with high frequency operations. In this paper, simulation of single gate enhancement mode InAs based composite channel MOSHEMT devices is performed for low power applications leading to the superior analog and RF performances. This performance is achieved by focusing the work towards the lattice matched composite channel, a recessed gate structure, HfO2 gate dielectric, and optimized source to drain spacing. The device performance characteristics are systematically analyzed with the optimized device dimensions of gate length (LG) = 50 nm, Barrier thickness (TB) = 3 nm, channel thickness (TCH) = 15 nm for the various gate to drain spacing. The reduction of a gate to drain spacing helps in minimizing the drain resistance and increased electron velocity. This effects in improving the transconductance (gm), drain current (ID), cutoff frequency (ft) along with the expense of short channel effects.