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Quality Aware Selective ECC for Approximate DRAM

机译:适用于近似DRAM的质量感知选择性ECC

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摘要

Approximate DRAMs are DRAM memories where energy saving techniques have been implemented by trading off bit-cell error rate with power consumption. They are considered part of the building blocks in the larger area of approximate computing. Relaxing refresh rate has been proposed as an interesting solution to achieve better efficiency at the expense of rising error rate. However, some works have demonstrated that much better results are achieved if at word-level some bits are retained without errors (i.e. their cells are refreshed at nominal rate), resulting in architectures using multiple refresh rates. In this paper we present a technique that can be applied to approximate DRAMs under reduced refresh rate. It allows to trim error rate at word-level, while still performing the refresh operation at the same rate for all cells. The number of bits that are protected is configurable and depends on output quality degradation that can be accepted by the application.
机译:近似DRAM是DRAM存储器,其中通过权衡比特单元错误率和功耗来实现节能技术。在较大的近似计算领域中,它们被视为构建块的一部分。已经提出了放宽刷新率作为一种有趣的解决方案,以提高错误率为代价来实现更高的效率。但是,一些工作表明,如果在字级保留一些位而没有错误(即,它们的单元以标称速率刷新),则会获得更好的结果,从而导致体系结构使用多个刷新率。在本文中,我们提出了一种可以在降低的刷新率下应用于近似DRAM的技术。它允许在字级修整错误率,同时仍对所有单元以相同的比率执行刷新操作。受保护的位数是可配置的,并且取决于应用程序可以接受的输出质量下降。

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