A Novel Trench Gate MOS Turn-off GCT Structure

摘要

A novel trench gate MOS turn-off GCT (TMOS-GCT) is proposed in this paper, in which a trench pMOS is induced between the conventional gate and the main GCT cell. The turn-on of T-MOS-GCT is controlled by current signals applied to the conventional gate, and the turn-off of TMOS-GCT is controlled by voltage signals applied to the trench gate, thus the T-MOS-GCT can achieve internal commutation. The internal commutation mechanism and characteristics are studied by Sentaurus-TCAD simulator, the results show that T-MOS-GCT can obviously improve turn-off current capability compared with planar gate MOS-GCT (PMOS-GCT).